The Professional Preparation section lists academic qualifications such as degrees and diplomas. Each record stores the degree, major, institution and year. The records can also be hidden from public view by checking the hide checkbox. Please click here for available slides.
The Research and Expertise section describes the areas in which you have expertise or are involved in research. Research Explorer's search engine indexes data in this field for keyword searches. Please click here for available slides.
Limited supply of fossil fuels and environmental pollution issues require renewable energy technology using hydrogen as energy carriers. Three key technology components are hydrogen production, storage, and utilization in fuel cells. At the core of the renewable energy technology research is new materials to convert energy from one form to another (e.g., photon energy to electricity in solar cell, or chemical energy to electricity in fuel cell). There are extensive research efforts to develop new nanomaterials with higher efficiency in the energy conversion and optimized functional properties, but most of them are driven by empirical trial-and-error material development process. Computational modeling can provide detailed understanding on the microscopic mechanisms and properties nanomaterials for diverse applications. Our research is to apply molecular dynamics and Monte Carlo simulations to identify atomic structures of nanoscale materials and use quantum simulations to investigate functional properties through electronic structure analysis. Target materials systems are carbon nanotubes, semiconductor nanowires, metal nanoparticles, and oxide nanomaterials in diverse functional nanocomposite nanomaterials.
High-k gate stack technology
Device scaling is leading to sub 32nm device feature size and continuous scaling requires new device materials such as high-k gate dielectric (replacing silica), metal gate electrode (replacing doped poly-silicon), and high mobility channel materials (e.g., Ge or compound semiconductors replacing silicon). These new device materials form interfaces and the interface properties critically control the device performance. These interfaces are very thin (nm scale), and computational modeling can provide critical insight to solve many technological challenges in developing the high-k gate stack as future device technology. Our research will apply atomistic modeling method to determine the atomic structure of the interfaces and quantum mechanical simulations to calculate the electronic structures. The analysis of simulation results would provide detailed insights on the nano-scale structure-property relationship of high-k gate stack materials.
Computational modeling study of nanomaterials with applications to nanoelectronic devices and renewable energy technology.
The Publications section lists any and all publications worked on. Research Explorer's search engine indexes data in this field for keyword searches. The category field is a user defined field where any number of categories can be created by the user to categorize publications. For example, publications can be categorized by the Journal that they appear in. Please click here for available slides.
Subramanian, R., P. Bhadrachalam, V. Ray, T. Park, J. Kim, K. Cho, and S.J. Koh, “Overcoming the intrinsic limit of Fermi-Dirac thermal smearing.” Nature (in preparation).
Gong, C., L. Colombo, and K. Cho. “Photo-Assisted CVD Growth of Graphene Using Single Metal Atom as Catalyst.” Nano Letters (in preparation).
Lee, G., L. Colombo and K. Cho, “Grain Boundary Effect on Electronic and Transport Properties of Graphene.” Nano Letters (in preparation).
Veyan, J., H.S. Choi, M. Huang, J. Ballard, S. McDonnell, M.P. Nadesalingam, H. Dong, I. S. Chopra, W. P. Kirk, J.N. Randall, R.M. Wallace, K. Cho and Y.J. Chabal. “Si2H6 dissociative chemisorption mechanism on Si(100) and Ge(100).” Journal of the American Chemical Society (in preparation).
Wang, W., K. Xiong, R.M. Wallace and K. Cho, “First-Principles Study of Initial Growth of GaΧO Layer on GaAs-β2(2×4) Surface and Interface Passivation by F.” Journal of Applied Physics (in preparation).
Prof's Theory Could Improve Shelf Life of Electronics
Research by UT Dallas engineers could lead to more efficient cooling of electronics, which would pave the way for quieter and longer-lasting computers, cellphones and other devices.
Much of modern technology uses silicon as semiconductor material. But research recently published in the journal Nature Materials shows that graphene conducts heat about 20 times faster than silicon.
The Nature Materials paper incorporates the findings of researchers at UT Austin, who conducted an experiment focused on graphene’s heat transfer. They used a laser beam to heat the center of a portion of graphene, then measured the temperature difference from the middle of the graphene to the edge. Cho’s theory helped explain their results.
The Nature Materials experiment was done in collaboration with Shanshan Chen and Weiwei Cai of Xiamen University in Xiamen China and UT Austin; Qingzhi Wu, Columbia Mishra and Rodney Ruoff of UT Austin; Junyong Kang also of Xiamen University; and Alexander Balandin of the University of California, Riverside.
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