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    Faculty Profile — Is this you? Login to edit.Last Modified Time: 09:59:20 PM Mon, 23 Jan 2012 
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Kyeongjae Cho
Professor-Materials Science
Office MailstopMail Box: RL 10, Room No.: NSERL 3.412 
Email Address  kxc067000@utdallas.edu    Primary Phone Number 972-883-2845    URL Faculty Page    Media Contact
 Professional Preparation
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 DegreeMajorInstitutionYear
 Ph.D.PhysicsMassachusetts Institute of Technology1994
 M.S.PhysicsSeoul National University, Korea1988
 B.S.PhysicsSeoul National University, Korea1986
Collapse Section Expand Section Research and Expertise
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Nanomaterials for renewable energy application
Limited supply of fossil fuels and environmental pollution issues require renewable energy technology using hydrogen as energy carriers. Three key technology components are hydrogen production, storage, and utilization in fuel cells. At the core of the renewable energy technology research is new materials to convert energy from one form to another (e.g., photon energy to electricity in solar cell, or chemical energy to electricity in fuel cell). There are extensive research efforts to develop new nanomaterials with higher efficiency in the energy conversion and optimized functional properties, but most of them are driven by empirical trial-and-error material development process. Computational modeling can provide detailed understanding on the microscopic mechanisms and properties nanomaterials for diverse applications. Our research is to apply molecular dynamics and Monte Carlo simulations to identify atomic structures of nanoscale materials and use quantum simulations to investigate functional properties through electronic structure analysis. Target materials systems are carbon nanotubes, semiconductor nanowires, metal nanoparticles, and oxide nanomaterials in diverse functional nanocomposite nanomaterials.
High-k gate stack technology
Device scaling is leading to sub 32nm device feature size and continuous scaling requires new device materials such as high-k gate dielectric (replacing silica), metal gate electrode (replacing doped poly-silicon), and high mobility channel materials (e.g., Ge or compound semiconductors replacing silicon). These new device materials form interfaces and the interface properties critically control the device performance. These interfaces are very thin (nm scale), and computational modeling can provide critical insight to solve many technological challenges in developing the high-k gate stack as future device technology. Our research will apply atomistic modeling method to determine the atomic structure of the interfaces and quantum mechanical simulations to calculate the electronic structures. The analysis of simulation results would provide detailed insights on the nano-scale structure-property relationship of high-k gate stack materials.
Research Interests
Computational modeling study of nanomaterials with applications to nanoelectronic devices and renewable energy technology.
Collapse Section Expand Section Publications
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  YearPublication  Type
forthcoming
Wang, W., G. Lee, M. Huang, R.M. Wallace, and K. Cho. “First-Principles study of GaAs (001)-β2(2x4) surface oxidation,” Microelectronic Engineering (in press).
Peer reviewed
forthcoming
Kapur, N., B. Shan, J. Hyun, L. Wang, S. Yang, J. Nicholas and K. Cho. “First Principles Study of CO Oxidation on Bismuth Promoted Pt(111) Surfaces,” Molecular Simulation (in press).
Peer reviewed
forthcoming
Bhatt, M., M. Cho, and K. Cho, “Conduction of Li + cations in Ethylene Carbonate (EC) and Propylene Carbonate (PC): Comparative Studies using Density Functional Theory.” Journal of Solid State Electrochemistry (in press).
Peer reviewed
forthcoming
Wang, W., C.L. Hinkle, E.M. Vogel, K. Cho, and R.M. Wallace. “Is interfacial chemistry correlated to gap states for high-k/III-V interfaces?” Microelectronic Engineering (in press).
Peer reviewed
forthcoming
Lee, G., Kwang S. Kim, and K. Cho. “Theoretical Study of the Electron Transport in Graphene with Vacancy and Residual Oxygen Defects after High-Temperature Reduction,” Journal of Phyical Chemistry C (in press).
Peer reviewed
 News Articles
Prof's Theory Could Improve Shelf Life of Electronics
UT Dallas News Center

Research by UT Dallas engineers could lead to more efficient cooling of electronics, which would pave the way for quieter and longer-lasting computers, cellphones and other devices.
 
Much of modern technology uses silicon as semiconductor material. But research recently published in the journal Nature Materials shows that graphene conducts heat about 20 times faster than silicon.
 
The Nature Materials paper incorporates the findings of researchers at UT Austin, who conducted an experiment focused on graphene’s heat transfer. They used a laser beam to heat the center of a portion of graphene, then measured the temperature difference from the middle of the graphene to the edge. Cho’s theory helped explain their results.
 
The Nature Materials experiment was done in collaboration with Shanshan Chen and Weiwei Cai of Xiamen University in Xiamen China and UT Austin; Qingzhi Wu, Columbia Mishra and Rodney Ruoff of UT Austin; Junyong Kang also of Xiamen University; and Alexander Balandin of the University of California, Riverside.

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