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    Faculty Profile — Is this you? Login to edit.Last Modified Time: 09:08:11 AM Mon, 26 Apr 2010 
Image of Dr. Yves Jean Chabal
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Dr. Yves Jean Chabal
Professor and Program Head-Materials Science, Endowed Chair-Materials Science
Office MailstopMail Box: RL10, RL 3.714 
Email Address  yjc072000@utdallas.edu    URL Web Link    Media Contact
Administrative Assistant:  Help  
Albritton, Betty L
 Professional Preparation
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 DegreeMajorInstitutionYear
 Post DocSurface PhysicsBell Labs1981
 Ph.DPhysicsCornell University1980
 B.A.PhysicsPrinceton University1974
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Optical spectroscopic and imaging techniques
Optical spectroscopic and imaging techniques to explore elementary processes on surfaces and at interfaces of technologically important electronic, photonic, organic and biological heterostructures

Infrared Absorption Spectroscopy
The implementation of infrared absorption spectroscopy to develop a detailed mechanistic understanding of semiconductor surface cleaning (both by wet and dry techniques), passivation and chemical functionalization

Thin dielectric films in liquids, UHV, gaseous ambients
Sensitive in-situ methods to probe the interaction of chemical species and the formation of thin dielectric films in a variety of environments, including liquids, ultra-high vacuum (UHV) and gaseous ambients

Other research Interests
  • Microelectronics
  • Optoelectronics
  • H2 storage for hydrogen fuel economy
  • Organic electronics
  • Nanoelectronics
  • Biosensors and graphene
Microelectronics
By identifying the surface modification after various wet chemical processes (HF etching, acid/base cleaning and etching) for several types of semiconductors (groups IV, IV-IV, III-V), by characterizing the nature of H, Cl, OH and oxide passivation of semiconductor surfaces, and by uncovering the growth mechanism of high-k dielectrics on silicon and germanium. We are exploring the growth by Atomic Layer Deposition (ALD) of Al2O3, HfO2, La2O3 with sub nm equivalent oxide thickness (to replace SiO2), and of metal contacts (TaN, Cu, Ru) and investigating the best wet chemical cleaning methods for high mobility substrates (e.g., Ge, InP) to replace silicon in future CMOS devices. We are also studying elementary processes at the surface of SiC, an important substrate for high-temperature, high-speed and high-voltage electronics.

Optoelectronics
By providing chemical information and badly needed fundamental understanding of III-V semiconductor surface passivation. After studying wet chemical etching and oxidation of InP, we are now exploring gaseous oxidation in controlled environments (e.g., UHV).

H2 storage for hydrogen fuel economy
By examining the manner in which hydrogen molecules interact and get incorporated into complex metal hydrides and metal organic framework (MOF) materials. In the case of metal hydrides, we study the dissociation and subsequent adsorption of H2 on Ti-doped aluminum surfaces to better understand and control the formation of complex metal hydrides (e.g., NaAlH4). For the MOF materials, we focus on the weak interactions between H2 molecules and the metal and organic ligands to design more effective ways of increasing the hydrogen concentration.
Organic electronics
By characterizing the chemical and structural nature of self-assembled monolayers (SAMs) on both metal and semiconductor surfaces. We are focusing on providing chemical and structural information to understand electronic conduction in organic materials by paying special attention to contact issues (substrate/SAM interfaces and effects of depositing top metal electrodes on SAM films). We are also developing spectroscopic methods to study the dependence of electronic conduction on conformational changes within the SAMs

Nanoelectronics
By using biological approaches to patterning surfaces on the nm and sub-nm scale. For instance, the possibility to manipulate DNA scaffolding is used to meet tight nanolithography requirements of integrated nano-circuits. An important aspect of this work is the control of DNA bonding to semiconductor  surfaces. To this end, we are working on the fundamentals of DNA/surface interactions.

Biosensors and graphene
By understanding the interaction of biological macro-molecules (DNA, glucose, LDL, etc.) with both organic and inorganic substrates. For instance, by studying the modulation of the electric field and charge transfer mechanisms by biological molecules, we are devising ways to implement electronic detection of biological species. We are also studying the chemistry of graphite with aim to produce high-quality graphene (via graphene oxide) and to understand  the oxidation of graphene using oxygen plasma, ozone and wet chemistry.

Collapse Section Expand Section Publications
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 2 3 4 Next>> 77>>  
  YearPublication  Type
2013
Diffusion of small molecules in metal organic framework materials, P. Canepa, N. Nijem, Y. J. Chabal, and T. Thonhauser, Physical Review Letters 110 (2), 026102 (2013).
Other
2013
Recovery of nonwetting characteristics by surface modification of gallium-based liquid metal droplets using hydrochloric acid vapor, D. Kim, P. Thissen, G. Viner, D. W. Lee, W. Choi, Y. J. Chabal, and J. B. Lee, ACS Applied Materials and Interfaces 5 (1), 179 (2013).
Other
2013
A High Vacuum Fracture Facility for Molecular Interactions, K. M. Liechti, S. R. Na, M. Wakamatsu, O. Seitz, and Y. Chabal, Experimental Mechanics 53, 231 (2013).
Other
2013
Vanadium oxide nanowire-Graphene binder free nanocomposite paper electrodes for supercapacitors: A facile green approach, S. D. Perera, A. D. Liyanage, N. Nijem, J. P. Ferraris, Y. J. Chabal, and K. J. Balkus Jr, Journal of Power Sources 230, 130 (2013).
Other
2013
Selective adsorption of SO2 into microporous paddlewheel frameworks, K. Tan, P. Canepa, Q. Gong, J. Liu, D. H. Johnson, A. Dyevoich, P. Thallapally, T. Thonhauser, J. Li, and Y. J. Chabal, Journal of Functional Materials (under review) (2013).
Other
Collapse Section Expand Section Presentations and Projects
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  1  2 3 4 
Start DateEnd DatePresentation/Project
12/04/2007  Growing Thin Films one layer at a time: Technological Challenges as Scientific Opportunities
Y.J. Chabal, Colloquium Saint Peters College, Jersey City, NJ Dec. 4, 2007
10/18/2009 10/20/2009 Interaction of molecular Hydrogen with Microporous Metal Organic Framework Materials
Nour Nijem, Jean-Francois Veyan, Yves J. Chabal, Kunhao Li, JeongYong Lee, Jing Li, Lingzhu Kong, Valentino R. Cooper, David C. Langreth, computational Materials Science Network on Predictive Modeling of the growth and properties of energy relevant thin films and nanostructures, Denver, CO, October 18-20, 2009.
10/05/2009 10/06/2009 Nanoporous mixed-matrix membranes for gas separation
K. J. Balkus, J.P. Ferraris, I. H. Musselman, K. Cho, Y. J. Chabal, Carbon Capture DOE workshop, College Park, MD, October 5-6, 2009.
09/16/2009 09/17/2009 In situ FTIR studies of thermal annealing of Graphene Oxide
Muge Acik, Geunsik Lee, Cecilia Mattevi, Manish Chhowalla, Kyeongjae Cho, Yves Chabal, NRI workshop, Austin, TX, September 16-17, 2009.
06/29/2008 07/02/2008 Initial growth of metal films using atomic layer deposition
Y.J. Chabal, J. Kwon, M.Dai, S. Park, R. Gordon, 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, June 29-July 2, 2008.
 Support
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 DurationTitleSponsorAmountStatus
7/6/09-7/05/2012Surface chemical functionalization of semiconductors and nanostructuresNSF-CHE-0911197$365,204Current
9/1/2009-8/31/2012Southwest Academy for Nanoelectronics: Graphene Device FabricationSRC Nanoelectronics Research Initiative and Texas ETF$150K for ChabalCurrent
9/1/10-8/31/2012Patterning of semiconductor surfaces via chemical self assembly for biomedical and energy applicationsTHECB NHARP Program$ 196,000Current
9/1/09-8/31/2012Improved electrical energy storage with electrochemical double layer capacitance based on novel carbon electrodes, new electrolytes, and thorough development of a strong science baseSISGR-EES Program of the U.S. Department of Energy$ 186,000 for ChabalCurrent
2/15/2010-8/14/2011Atomically Precise ManufacturingDARPA/Zyvex/State of Texas$116,000 for ChabalCurrent
4/1/09-3/31/2011Nanoscale silicon for cancer diagnosticsTexas Instruments$ 100,000 for ChabalCurrent
1/1/2010-12/31/2010Precursor evaluation for metal film growth using atomic layer deposition and chemical vapor depositionSAFC-Hitech$ 75,000Current
8/15/2007-8/14/2010Novel theoretical and experimental approaches for understanding and optimizing hydrogen-sorbent interactions in metal organic framework materials (current DOE grant)DOE - BES$990,000Current
9/1/2005-12/30/2010Atomistic transport mechanisms in reversible complex metal hydridesDOE (subcontract from Brookhaven National Labs)$580,000 for ChabalCurrent
9/1/09-8/31/2010Diversity Fellowship for graduate studentTexas Instruments$ 40,900Current
7/1/09-6/31/12MOMA - Modeling integrated nano structured energetic MaterialsPartner University Fund (France-USA collaborative Program)$81KCurrent
7/1/09-6/31/12Future Oxides and Channel materials for Ultimate Scaling (FOCUS)NSF (US-Ireland partnership)$75,000 for ChabalCurrent
 News Articles
Grant Aids Quest to Use Hydrogen for Clean Energy
UT Dallas News Center

Researchers at UT Dallas and Rutgers University have received a $1 million grant from the U.S. Department of Energy to explore a key component in making hydrogen a widely used form of clean energy.

Hydrogen could be a significant part of a clean-energy economy – powering motor vehicles in particular – but storage has been a stumbling block. Scientists are searching for a practical alternative to either compressed gas or chilled liquid hydrogen.
 
The UT Dallas/Rutgers team is exploring a technology known as a metal organic frameworks.

Technology Awards Salute Entrepreneur, Researcher
UT Dallas News Center
A technology breakthrough and an emerging company with close connections to UT Dallas have each been honored with one of the Metroplex Technology Business Council’s annual Tech Titan awards.
 
Researcher Yves Chabal received the Tech Titan Tech Innovator award for work that promises to greatly improve semiconductor devices’ performance in health care and solar power applications. And MicroTransponder, a biotechnology firm sponsored by The Institute for Innovation and Entrepreneurship at UT Dallas, won the Tech Titan Emerging Company Award.
 
Chabal’s work lays the groundwork for attaching virtually any organic molecule to silicon. In addition to enabling biosensors that detect minute quantities of substances such as cancer-marker proteins, the new technology promises a new generation of higher-efficiency solar cells that could incorporate sunlight-sensitive biomolecules, for example, that capture photons and transfer the energy to the electronic substrate.

Prof Lauded for Groundbreaking Semiconductor Work
UT Dallas News Center
 
The American Physical Society has awarded a UT Dallas researcher one of the society’s highest honors, recognizing Dr. Yves Chabal’s development of methods to better understand processes that take place on the silicon surface that is literally the platform for the multibillion-dollar semiconductor industry.
 
“Yves’s development of infrared spectroscopy in the 1980s to understand the processes that occur on silicon surfaces during semiconductor manufacturing changed how everyone in the semiconductor industry does their work,” said Bruce Gnade, vice president for research at UT Dallas. “His work has had tremendous impact. In the world of infrared spectroscopy of semiconductor surfaces,Yves is the world’s expert.”
 
Dr. Chabal is head of the Materials Science and Engineering Department in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and the first holder of the school’s Texas Instruments Distinguished University Chair in Nanoelectronics.

Researchers Drafting Plans for Tiny Assembly Lines
UT Dallas News Center
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time.
 
“This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project.
 
Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.

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toggle toggle Invited Talks
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Invited Talks
  1. "Interaction of molecular Hydrogen with Microporous Metal Organic Framework Materials" Nour Nijem, Jean-Francois Veyan, Yves J. Chabal, Kunhao Li, JeongYong Lee, Jing Li, Lingzhu Kong, Valentino R. Cooper,  David C. Langreth, computational Materials Science Network on Predictive Modeling of the growth and properties of energy relevant thin films and nanostructures, Denver, CO, October 18-20, 2009.
  2. "Nanoporous mixed-matrix membranes for gas separation",  K. J. Balkus, J.P. Ferraris, I. H. Musselman, K. Cho, Y. J. Chabal, Carbon Capture DOE workshop, College Park, MD, October 5-6, 2009.
  3. "In situ FTIR studies of thermal annealing of Graphene Oxide", Muge Acik, Geunsik Lee, Cecilia Mattevi, Manish Chhowalla, Kyeongjae Cho, Yves Chabal, NRI workshop, Austin, TX, September 16-17, 2009.
  4. "Novel Theoretical and Experimental Approaches for Understanding and Optimizing Hydrogen-sorbent Interactions in Metal Organic Framework Materials", Nour Nijem, Jean-Francois Veyan, Yves J. Chabal, Kunhao Li, JeongYong Lee, Jing Li, Lingzhu Kong, Valentino R. Cooper,  David C. Langreth, Hydrogen storage Contractors' Meeting for DOE- BES, Washington, DC,  May 20, 2009.
  5. "Tutorial on Interface formation Mechanisms for deposited Dielectric Layers on Si and High Charge Mobility Substrates", Y.J. Chabal, 2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17, 2009.
  6. "Hydrogen storage in nanoporous materials", Y. J. Chabal, Physics Colloquium, University of Texas at Dallas, March 23, 2009.
  7. "Hydrogen storage in nanoporous materials", Y. J. Chabal, American Physical Society, Pittsburgh, PA March 16-20, 2009. (Davisson-Germer Prize talk)
  8. " In-situ studies of high-k dielectric on semiconductors and metal films on high-k dielectrics" Y. J. Chabal, 3rd International Workshop on high-? dielectrics on high mobility channel materials, Tsing Hua University, Hsinchu, Taiwan, Jan. 19, 2009.
  9. " In-situ studies of high-k dielectric on semiconductors and metal films on high-k dielectrics" Y. J. Chabal, Joint AVS and Taiwan Annual Physical Society Meeting on "Beyong Si CMOS", Tapei, Taiwan, Jan. 20-21, 2009.
  10. "Initial growth of metal films using atomic layer deposition", Y.J. Chabal, J. Kwon, M. Dai, S. Park, R. Gordon, 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, June 29-July 2, 2008.
  11. "Characterizing surface chemistry with infrared spectroscopy", Y.J. Chabal, ThermoFisher Scientific Colloquium, Madison, WI, June 3, 2008.
  12. "Atomic Layer Precursor Evaluation: Need for in-situ characterization" Y.J. Chabal, SAFC Hitech Colloquium, Sheboygan, WI, May 27, 2008.
  13. "Nanoelectronics - Potential and Implications to the Engineering Field"Y. J. Chabal, Society of Professional Hispanic Engineers Professional Development Conference, Plano, TX, April 24, 2008.
  14. Surface Infrared Spectroscopy, Y.J. Chabal and K. Raghavachari, American Chemical Society Spring Meeting, New Orleans, April 7-11, 2008.
  15. "Passivation of Silicon Surfaces", Y.J. Chabal, Basics and Advanced Topics of Surface Conditioning and Cleaning Processing for Integrated Circuit Manufacturing, SEMATECH conference, Austin, TX, March 31, 2008.
  16. In situ Transmission Infrared Spectroscopy during Atomic Layer Deposition, Jinhee Kwon, Min Dai, Erik Langereis, Yves J. Chabal, Thermo Research Symposium, March 2008 Princeton, NJ, USA
  17. "Growing Thin Films one layer at a time: Technological Challenges as Scientific Opportunities", Y.J. Chabal, Colloquium Saint Peters College, Jersey City, NJ Dec. 4, 2007
  18. "Chemical Functionalization of Semiconductor Surfaces for Biomedical Applications", N. Lapin, Y.J. Chabal, Eastern Analytical Symposium, Piscataway, NJ, Nov. 12-16, 2007.
  19. "Liquid Methanol Reaction with H-terminated Surfaces", Y.J. Chabal, D. Michalak, S. Rivillon-Amy, 54th AVS International Symposium, Seattle, WA, Oct. 15-19, 2007.
  20. "In-situ characterization of thin film growth with Atomic Layer Deposition" M. Dai, J. Kwon, Y.J. Chabal, Z. Li and R. Gordon, American Chemical Society Meeting, Boston, Aug. 20-24, 2007.
  21. "Building materials one layer at a time: Technological challenges as scientific opportunities", Y.J. Chabal, R.B. Woodard Lectures in the Chemical Sciences Harvard/MIT Physical Chemistry Seminar, Harvard University, Boston, MA. Feb. 1-2, 2007.
  22. "In situ Infrared Absorption Spectroscopy for Thin Film Growth by Atomic Layer Deposition", Y.J. Chabal, Symposium on Advances in in-situ characterization of film growth and interface processes at the Fall 2006 Materials Research Society meeting, Boston, Boston, MA. Nov. 27-Dec.1, 2006.
  23. "Building materials one layer at a time: Technological challenges as scientific opportunities", Y.J. Chabal, Physics Colloquium, Michigan State University, Lansing, Mi, Oct. 26, 2006.
  24. "In-situ infrared absorption spectroscopy for thin film growth by atomic layer deposition", Y. J. Chabal, SPIE Conference on Physical Chemistry of Interfaces and Nanoparticles V, San Diego, CA, Aug. 15-17, 2006.
  25. "Interface chemistry during Atomic Layer Deposition growth studied by in-situ infrared spectroscopy", Y. J. Chabal, Y. Wang, M-T. Ho, M. Dai, AVS Atomic Layer Deposition conference, Seoul, Korea, July 24-26, 2006.
  26. Wet Chemical Cleaning of Germanium Surfaces for Growth of high-k dielectrics, Y. J. Chabal and S. Rivillon, Symposium on Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications, Spring Meeting of the Materials Research Society, San Francisco, CA, April 18-20, 2006.
  27. Passivation and stability of Germanium surfaces Y.J. Chabal, Advanced Gate Stack Engineering Workshop, Austin, TX, Feb. 28-March 1, 2006.
  28. In-situ infrared spectroscopy of high-k dielectrics growth on semiconductors, Y.J. Chabal, AVS 52nd International Symposium, Boston, MA, Oct. 30-Nov. 4, 2005.
  29. Interface Formation between Ge (and Si) substrates and HfO2 films using in-situ Infrared Absorption Spectroscopy, Y.J. Chabal, AVS 5th international Conference on Atomic Layer Deposition, San Jose, CA, Aug. 8-10, 2005.
  30. In-situ Infrared Spectroscopy during Atomic Layer Deposition of Metal Oxides, Y.J. Chabal, Workshop on Challenges in Multifunctional Material Stoichiometry, Jackson Hole, WY, July 17-21, 2005.
  31. High-k dielectrics: the interface problem, Y.J. Chabal, SEMATECH, Austin, TX, June 27, 2005.
  32. Semiconductor surface chemical functionalization for microelectronic applications: Technological challenges as scientific opportunities, Y.J.Chabal, Materials Science Colloquium, University of Delaware, Newark, DE, March 9, 2005
  33. Semiconductor Surface Chemical Functionalization for Electronic Devices, Y.J. Chabal, Gordon Conference on Chemical Reactions at Surfaces, Ventura, CA, Feb. 13-18, 2005.
  34. High-k dielectric gate oxide interface engineering to minimize EOT, Y.J. Chabal, Advanced Gate Stack Engineering Workshop, Austin, TX, Feb. 14-15, 2005.
  35. Growing Materials One Atomic Layer at a time, Y.J. Chabal, Chemistry colloquia at Smith College and at Wesleyan College, Oct. 7 and 8, 2004
  36. ALD growth of ultra-thin high-k dielectrics monitored by in-situ infrared spectroscopy, Seminaire du pole MINAS, LAAS, Y.J. Chabal, Toulouse (France) July 7, 2004.
  37. In-situ Studies of Wet and Dry Processing of semiconductor surfaces, Y.J. Chabal, 227th ACS National Meeting, Anaheim, CA, March 28-April 1, 2004.
  38. Atomic Layer Deposition growth of ultra-thin high-k dielectrics monitored by in-situ infrared spectroscopy, Y.J. Chabal, 1st International NanoElectronics Materials Conference, Grenoble (France), March 2-4, 2004.
  39. Mechanistic studies of semiconductor wafer bonding and layer exfoliation by H-implantation, Y.J. Chabal, Colloquium, SOITECH, Grenoble (France), March 3, 2004.
  40. A mechanistic look at semiconductor front-end processing, Y.J. Chabal, IBM Colloquium Yorktown Heights, NY, Dec. 2, 2003.
  41. Semiconductor Surface passivation, Y.J. Chabal, Symposium on Semiconductor Interfaces, 226th American Chemical Society National Meeting, New York, Sept. 7-11, 2003.
  42. In-situ Infrared Absorption Spectroscopy of Atomic Layer Deposition, Y.J. Chabal, 2003 Atomic Layer Deposition Conference, San Jose, Aug. 4-6, 2003.
  43. Passivation of semiconductor surfaces: technological challenges and opportunity for spectroscopy, Y.J. Chabal, Gordon Conference on Chemistry of Electronic Materials, New London, CT, July 13-18, 2003.
  44. In-situ infrared characterization of oxide growth on semiconductor surfaces, Y.J. Chabal, ONR workshop on Epitaxial Heterogeneous Interfaces: Formation and Stability, May 5-7, 2003.
  45. Mechanistic Studies of Wafer bonding and Layer Exfoliation by H-implantation, Y.J. Chabal, M.M. Frank, A. Fontcuberta y Moral, J.M. Zahler, Symposium on Integration and Heterogeneous thin-film Materials and Devices of 2003 Spring Meeting of the Materials Research Society, April 21-25, 2003.
  46. High-K Gate Dielectric Interface Engineering, Y. J. Chabal, Sematech International, Austin, TX, Jan. 30, 2003.
  47. How industrial challenges are opportunity for interfacial chemistry Y.J. Chabal, Nicolet Technical Symposium, Chicago, Nov. 12, 2002.
  48. The search for interface perfection, Y.J. Chabal, Chemistry Colloquium, Princeton University, Oct. 15, 2002.
  49. Infrared Absorption studies of Electronic and Vibrational Surface States, Y.J. Chabal, International Workshop on Electron-Phonon Effects in Nanosystems, Montauk, NY, Sept. 23-25, 2002.
  50. Oxidation of Semiconductor Surfaces, Y.J. Chabal, O.Pluchery, F. Amy, M. Frank and K. Raghavachari, International Conference on Solid Films and Surfaces, Marseille, July 4-10, 2002.
  51. Electronic, Photonic and Nanomaterials, Y.J. Chabal, Materials Science Colloquium, Columbia University, May 8, 2002.
  52. Searching for Interface Perfection, Y.J. Chabal, Chemistry Colloquium, Rutgers University, April 22, 2002.
  53. Semiconductor Oxidation, Y.J. Chabal, Physics Colloquium,Brookhaven National Labs, Dec. 18, 2001.
  54. Applications of Infrared Spectroscopy for Technological Surfaces, Y.J. Chabal, 10th International conference on Vibrations at Surfaces (June 17-21, 2001, St Malo, France)
  55. Semiconductor Surface Passivation: Initial nitridation and oxidation of silicon surfaces, Y.J. Chabal, Samuel McElvain Lecture, Department of Chemistry, University of Wisconsin, May 3, 2001, Madison, WI.
  56. Interfacial Chemistry in Direct Wafer Bonding, Y.J. Chabal and M.K. Weldon, Materials Research Society Spring Meeting, April 16-20, 2001, San Francisco, CA.
  57. Semiconductor Surface Passivation: initial oxidation of silicon surfaces, Y.J. Chabal, UCLA Seminar in Chemical Engineering, March 15, 2001, Los Angeles, CA.
  58. Mechanistic Studies of Dielectric Growth on Silicon, Y.J. Chabal, American Physical Society March Meeting, March 12-15, 2001, Seattle, VA.
  59. Applications of Infrared Absorption Spectroscopy in the Microelectronic Industry, Y.J. Chabal, Nicolet Research Symposium, Jan. 25, 2001, Princeton, NJ.
  60. Kinetic Monte Carlo mechanistic study of Si(100) initial thermal oxidation, A. Estève, Y.J. Chabal, K. Queeney, K. Raghavachari, M.K. Weldon, M.D. Rouhani, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan. 7-11, 2001, Orlando, FL.
  61. Mechanistic Studies of the initial Si(100)-(2x1) Oxidation and Nitridation, Y.J. Chabal, Surface and interface physics Seminar series at the CEA Saclay, Nov. 17, 2000, Saclay, France.
  62. The role of hydrogen in silicon exfoliation by H+-implantation, Y.J. Chabal, 16th International Conference on the Application of Accelerators in Research and Industry (CAARI), Nov. 1-4, 2000, Denton, TX.
  63. Mechanistic studies of direct wafer bonding and silicon passivation, Y.J. Chabal, Materials Physics Colloquium, Rutgers University, New Brunswick, NJ, March 28,2000.
  64. FTIR Studies of the Si/SiO2 Interface, Y.J. Chabal and K.T. Queeney, Nicolet Technical Symposium (Foster City, CA, Feb. 8, 2000)
  65. Interface Formation in the Growth of Oxides and Nitrides, Y.J. Chabal and K.T. Queeney, 1999 Semiconductor Interface Specialists Conference,Charleston, South Carolina, Dec. 2-4, 1999.
  66. Mechanistic studies of wafer bonding and thin silicon film exfoliation, Y.J. Chabal, M.K. Weldon and E. Isaacs, Fall Symposium of the Materials Research Society (Boston, MA) Nov. 29-Dec.3, 1999
  67. Nature of the Si-SiO2 Interface: a vibrational study, Y. J. Chabal, Workshop on the Si-SiO2 and the SiC-SiO2 Interfaces – Similarities and Differences, Vanderbilt University, Nashville, TN, Nov. 4-5, 1999
  68. The Structure and Composition of Wet Chemical Oxides: A photoemission and infrared study, R.L Opila, J. Eng, Jr., Y.J. Chabal, J. M. Rosamilia, and M.L. Green, Electrochemical Society Meeting, Fall 1999, Honolulu, Hawaii.
  69. Infrared Spectroscopy as a Probe of Semiconductor/Dielectric Interfaces: Growth and Structure of SiO2 on Si, K.T. Queeney,  M.K. Weldon, Y.J. Chabal and K. Raghavachari, 46th International Symposium of the American Vacuum Society (Seattle, WA, Oct. 25-29, 1999)
  70. FTIR Studies of the Growth and Structure of the SiO2/Si Interface, K.T. Queeney, Y.J. Chabal, M.K. Weldon and K. Raghavachari, Meeting of the American Chemical Society, New Orleans, LO, Aug. 23-27, 1999.
  71. The mechanism of the initial oxidation of Si(100)-(2 x 1) as studied by external transmission infrared spectroscopy and density functional theory, Y.J. Chabal, M.K. Weldon,  K.T. Queeney and K. Raghavachari, 12th International Conference on Fourier Transform Spectroscopy, Tokyo,Japan, Aug. 22-27, 1999.
  72. Smart-Cut Technologies and Processes: Infrared Absorption Spectroscopies, Y.J Chabal, M.K. Weldon, Y. Caudano, B. Stefanov and K. Raghavachari, 20th International Conference on Defects in Semiconductors (ICDS-20), Berkeley, CA, July 26-30, 1999.
  73. Elementary Processes in Silicon Oxidation, Y.J. Chabal, Fifth International Conference on Atomically Controlled Surface and Interfaces, Aix-en-Provence, France (July 5-8, 1999)
  74. FTIR Studies of the Growth and Structure of Ultrathin SiO2 Films on Silicon,  Y.J. Chabal, K.T. Queeney, M.K. Weldon and K.Raghavachari, International Conference on the Next Generation Materials and Devices for Silicon-based Microelectronics, Shanghai,China May 30-June 2, 1999.
  75. Silicon Oxidation and Ultra-thin Oxide Formation on Silicon Studied by Infrared Absorption Spectroscopy, Y. J. Chabal, K. Queeney, M. Weldon, K. Raghavachari, Surface & Interface Optics Workshop, St Maxime, France, May 4-8, 1999.
  76. Semiconductor Surface Passivation, Moses Gomberg Lecture, University of Michigan, April 15, 1999
  77. Initial Steps in Silicon Oxidation and Nitridation: From discrete SiOx and Si-Nx surface structures to continuous films, K. T. Queeney, Y.J. Chabal, M.K. Weldon, B. Stefanov and K. Raghavachari, Materials Research Society Spring Meeting, San Francisco, CA (April 5-9, 1999)
  78. Initial Growth of Silicon Oxide, Nitride and Oxynitride, Y.J. Chabal, Annual Meeting of the American Physical Society, Atlanta, GA (March 22-26, 1999)
  79. Exotic structures on oxidized Silicon surfaces, 26th International Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-26) San Diego, CA (January 17-21, 1999)
  80. Ultra-thin Oxides and Semiconductor Surface Passivation, Nicolet Research Symposium, New Brunswick, NJ (Oct. 14, 1999) and Philadelphia, PA (Dec. 3, 1999)
  81. The Fundamental Mechanisms of Silicon Wafer Bonding and Layer Exfoliation, M.K. Weldon and Y.J. Chabal,  International Symposium of the American Vacuum Society, Baltimore, MD (Nov. 2-6, 1998)
  82. Water Induced Oxidation on Si(100), Y.J. Chabal, 216th American Chemical Society National Meeting (Boston, MA) Aug. 23-27, 1998.
  83. Theoretical Studies of Silicon Oxidation, K. Raghavachari, B.B.Stefanov, Y.J. Chabal, and M.K. Weldon, Workshop on Semiconductor Surface Chemistry (Telluride, CO) Aug. 9-14, 1998.
  84. Mechanisms of the Initial Oxidation of Si(100)-(2x1), Y.J. Chabal, M.K. Weldon, B.B. Stefanov, A.B. Gurevich, and K. Raghavachari, Workshop on Semiconductor Surface Chemistry (Telluride, CO) Aug. 9-14, 1998.
  85. Infrared Spectroscopy of Silicon Defects, Platelets and Exfoliation upon hydrogen Implantation and Remote Plasma Hydrogenation, Y.J. Chabal, Gordon Research Conf. on Point Defects in Semiconductors (New London, NH) July 12-17, 1998.
  86. Silicon surface oxidation, Y.J. Chabal, Workshop on Macroscopic and Microscopic Characterization of Semiconductor Surfaces and Interfaces (U. Texas, Austin, TX) April 20-21, 1998.
  87. Studies of Silicon Oxidation, B.B. Stefanov, K .Raghavachari, Y.J. Chabal and M.K. Weldon, American Chemical Society, Spring meeting (Dallas, TX) March 30-April 3, 1998.
  88. How does Silicon Oxidize? Infrared Studies of H2O oxidation on Si(100), Y.J. Chabal, Physics Colloquium, City University of New York (Queens College, NY) March 9,1998.
  89. Mechanistic Studies of Silicon Wafer Bonding and Layer Exfoliation, M.K. Weldon, V.E. Marsico, Y.J. Chabal, et al., 4th Intern. Symposium on Semiconductor Wafer Bonding: Science Technology and Applications (Paris, France), Aug. 31-Sept. 5, 1997.
  90. Industrial Challenges as Research Opportunities: Silicon Wafer Bonding and Silicon Exfoliation, Y.J. Chabal, American Electronic Materials and Devices 1997 Seminar series, (Princeton University, Princeton, NJ) May 12, 1997.
  91. Mechanistic Studies of the Initial Oxidation of Silicon, M.K. Weldon, B.B. Stefanov, K. Raghavachari, and Y.J. Chabal, American Chemical Society Spring meeting  (San Francisco, CA), April 7-10, 1997.
  92. Vibrational Studies of the water-induced oxidation of Si(100), M.K. Weldon, J. Eng, Jr., B.E. Bent, Y.J. Chabal and L.M. Struck, Symposium honoring the memory of Prof. Brian E. Bent, 213th American Chemical Society Meeting, San Francisco, CA, April 13-16, 1997.
  93. Infrared Spectroscopy of Hydrogen at Surfaces and Interfaces, Y.J. Chabal, American Physical Society March Meeting (Kansas City, MO), March 17-21, 1997
  94. The Ubiquitous Role of Oxygen and Hydrogen in Silicon Processing: A surface scientist view, Y.J. Chabal, 11th Annual Symposium of the Lab. Surface Modification (Rutgers, NJ), Feb. 13, 1997.
  95. Infrared Spectroscopy as a Probe of Fundamental Processes occurring at Buried Interfaces, M. K. Weldon and Y.J. Chabal, Nicolet Instrument Corporation Research Symposium (Pasadena, CA) Jan. 15, 1997.
  96. Applications of Infrared Spectroscopy to the Microelectronics Industry, Y.J. Chabal, Neuvieme Entretiens du Centre Jacques Cartier sur Surfaces and Interfaces of Advanced Materials (Montreal, Canada) Oct. 2-4, 1996.
  97. Electron-Phonon coupling Signatures in HREELS and IR Spectra of Ultrathin Fullerene Films on Metals, P. Rudolf, P. Dumas, K. Hevesi, R. Caudano, G.P. Williams, L.M. Struck and Y.J. Chabal, 8th International Conf. on Vibrations at Surfaces (Birmingham, England) June 23-27, 1996.
  98. Infrared Spectroscopy as a Probe of Fundamental Processes in Microelectronics: Silicon wafer Cleaning and  Bonding, M.K. Weldon and Y.J. Chabal, 8th International Conf. on Vibrations at Surfaces (Birmingham, England) June 23-27, 1996.
  99. Spectroscopic Fingerprints at H/Si(111)-(1x1) and Ag/H/Si(111)-(1x1) Interfaces, P. Dumas and Y.J. Chabal, European Research Conf. on Fundamental Aspects of Surface Science: Semiconductor Surfaces (Blankerberge, Belgium) June 7-11, 1996.
  100. Industrial Challenges as Opportunities for Basic Research: Silicon Wafer Bonding, Y.J. Chabal, Chemical Physics Colloquium, Columbia University (Feb. 6, 1996).
  101. Physics and Chemistry of Silicon Wafer Bonding: an infrared Absorption study, Y.J. Chabal, M.K. Weldon, S.B. Christman, E.E.Chaban, L.C. Feldman, D.R. Hamann, et al., 23rd conf. on the Physics and Chemistry of Semiconductor Surfaces (La Jolla, CA) Jan. 21-25, 1996.
  102. Industrial Challenges as Opportunities for Basic Research: Silicon-on-Insulator and Silicon Wafer Bonding, Y.J. Chabal, Materials Science Department Colloquium, (Stony Brook, NY) Nov. 1, 1995.
  103. Interface Infrared Characterization of Direct-bonded Si-Si Substrates, Y.J. Chabal, et al., Workshop on Direct Silicon-silicon Bonding for Power Devices, NRL (Washington DC) Nov. 9, 1995.
  104. Infrared Spectroscopy of Semiconductor Surfaces and Interfaces, Y.J. Chabal, Gordon Conf. on Excitation at Semiconductor Surfaces: Fundamental Concepts and Applications in Semiconductor Processing (Hoahu, Hawaii) Nov. 13-18, 1994.
  105. Cleaning of Semiconductor Surfaces: Infrared Characterization, Y.J. Chabal, Y. Ma and R. Gottscho, American Vacuum Society 6th Conf. on Quantitative Surface Analysis (Minneapolis, MN) Oct. 16-20, 1995.
  106. Characterization of Silicon Surfaces and Interfaces by Vibrational Spectroscopy, Y.J. Chabal, M.A. Hines and D. Feijoo, 41st National Symposium of the American Vacuum Society (Denver, CO) Oct. 24-28, 1994
  107. Atomic Scale Removal Mechanism during Chemo-mechanical Polishing of Si(100) and Si(111), G.J. Pietsch, G.S. Higashi and Y.J. Chabal, 14th European Conf. on Surface Science (ECOSS-14) (Leipzig, Germany) Sept. 19-23, 1994.
  108. Phase Relaxation of the Si-H stretch mode on Stepped H/Si(111) Surfaces, P. Jakob and Y.J Chabal, 14th European Conf. on Surface Science (ECOSS-14) (Leipzig, Germany) Sept. 19-23, 1994.
  109. Hot Water Etching of Silicon Surfaces: Mechanisms and Implications to Device Fabrication. G. Higashi, T. Boone, K. Hanson Y.J. Chabal et al, Symposium on UltraClean Processing of Silicon Surfaces (Bruges, Belgium) Sept. 9-14, 1994.
  110. Vibrational Characterization and Electronic Properties of ordered, ideally hydrogen –terminated  Si(111) Surfaces, P. Dumas and Y.J. Chabal, 18th Int. Sem. On Surface Physics (Kudowa, Poland) June 6-11, 1994.
  111. Vibrational and Electronic Properties of H/Si(111)-(1x1) Surfaces, P. Dumas and Y.J. Chabal, Ann. Meeting of the Belgium Physical Society (Mons, Belgium) May 26-27, 1994.
  112. Vibrational Dynamics at Surfaces, P. Dumas and Y.J. Chabal, 14th Int. General Conf.  of the Condensed Matter Division (Madrid, Spain) March 28-31, 1994.
  113. Chemo-mechanical polishing of Silicon: Chemical Surface Termination and Atomic Mechanism of Removal, G.J. Pietsch, G.S. Higashi and Y.J. Chabal, Annual Meeting of the German Physical Society (Muenster, Germany) March 21-24, 1994.
  114. Dimensions of Luminescent Porous Silicon Structures, S. Schuppler, S.L Friedman, M.Marcus, Y.J. Chabal et al., American Physical Society March Meeting (Pittsburgh, PA) March 21-25, 1994.
  115. Chemical Preparation and Structure Characterization of Hydrogen terminated Si(111) Surfaces, Y.J. Chabal, American Physical Society March Meeting (Pittsburgh, PA) March 21-25, 1994.
  116. Surface Vibrational Spectroscopies for Silicon Processing, Y.J. Chabal, Int. conf. on Advanced Microelectronic Devices and Processing, Sendai, Japan, March 3-5, 1994.
  117. Chemically prepared Silicon Surfaces studied by Optical Spectroscopy, Y.J. Chabal, Materials Science Colloquium, University of Wisconsin (Madison, WI) Nov. 11, 1993.
  118. Adsorbate Vibrations at Semiconductor Surfaces, Y.J. Chabal, ONR Workshop on Surface Dynamical Processes (Nashville, TN) Oct. 28-29, 1993.
  119. Using Vibrational Spectroscopy to probe Adsorbate Orientations and Structure on Silicon Surfaces,  M.A. Hines and Y.J. Chabal, American Chemical Society Meeting (Washington, DC) Aug. 23-27, 1993.
  120. Interadsorbate Vibrational Energy Flow on stepped H/Si(111) Surfaces, M. Morin, K. Kunhke, P. Jakob, Y.J. Chabal, A.L. Harris, 7th Int. Conf. on Vibrations at Surfaces (Portofino, Italy) June 14-17, 1993.
  121. Chemical Reactions at the silicon/solution interface studied by optical spectroscopy, Y.J. Chabal, Semiconductor Surface Reactions: and exchange between Electrochemistry and Surface Science workshop (Amsterdam, Netherland) June 8-14, 1993.
  122. Chemicstry on Silicon Surfaces by Optical Spectroscopy, Y.J. Chabal and M.A. Hines, American Chemical Society Meeting (Denver, CO) March 28-April 2, 1993.
  123. Vibrational Spectroscopy of Adsorbates at Semiconductor Surfaces, Y.J. Chabal, Gordon conference on Chemical Reactions at Surfaces (Ventura, CA) March 8-12, 1993.
  124. Recent Advances in Surface Science Techniques, Y.J. Chabal, American Vacuum Society Tutorial, 39th National Symposium (Chicago, IL) Nov. 8, 1992.
  125. Infrared Spectroscopy of Semiconductor Surfaces: Hydrogen-terminated Silicon Surfaces, Y.J. Chabal, 11th European congress on Molecular Spectroscopy (Vienna, Austria) Aug. 23-28, 1992.
  126. Etching of Silicon(111) and (100) in HF solutions: H-termination, atomic structure and overall morphology, Y. J. Chabal, Materials Research Society Conference (San Francisco, CA) April 27-May 1, 1992.
  127. Optical Techniques for Surface Science, Y.J. Chabal, APS March Meeting (Indianapolis, IN) March 15, 1992.
  128. Infrared Spectroscopy of Chemically prepared Silicon Surfaces, Y.J. Chabal, Fujitsu Laboratories (Atsug, Japan) Jan. 25, 1992.
  129. Infrared Spectroscopy of Semiconductor Surfaces, Y.J. Chabal, Musashi Institute of Technology (Tokyo, Japan) Jan. 20, 1992.
  130. Infrared Spectroscopy of Chemically prepared Silicon Surfaces, Y.J. Chabal, Colloquium, Tohoku University (Sendai, Japan) Jan. 19, 1992.
  131. Control of Silicon Surfaces: Morphology by Aqueous Chemical Etching, Y.J. Chabal, P. Jakob and G. S. Higashi, International Workshop on Science and Technology for Surface Reaction Process (Tokyo, Japan) Jan. 22-24, 1992.
  132. Chemically HF-etched Si(111) and Si(100): from rougher to atomically flat H-terminated Surfaces, P. Dumas and Y.J. Chabal, ECOSS 12 (Stokholm, Sweden) Sept. 8-12, 1991.
  133. Chemically prepared Silicon Surfaces: etching proces, hydrogen termination, surface structure and vibrational dynamics, Y.J. Chabal, 2nd Pennsylvania Surface Science Workshop, Lehigh University (Lehigh, PA) July 17-19, 1991.
  134. Terminaison hydrogène du Si(100), K. Berrada, P. Dumas and Y.J. Chabal, Journées de la Société de Chimie Physique (Paris, France) May 21, 1991.
  135. Hydrogen chemisorption on Seminconductor and Metal Surfaces: infrared absorption studies of H interactions with the substrate, Y.J. Chabal, Symposium on Hydrogen in and on solids, American Chemical Society Meeting (Atlanta, GA) April 14-19, 1991.
  136. Hydrogen passivation of Silicon Surfaces using HF etching, Y.J. Chabal, Symp. on Silicon Hydride Chemistry and Silicon CVD Mechanics, American Chemical Society Meeting (Atlanta, GA) April 14-19, 1991.
  137. Infrared Spectroscopy of H on W(100) and Mo(100), Y.J. Chabal, European Science Foundation Workshop on the (100) surface of Tungsten: Phase transitions and adsorbate-induced reconstruction (Cambridge, England) March 25-27, 1991.
  138. Adsorbate-substrate Vibration: H on Si(111), Y.J. Chabal, American Physical Society March Meeting (Cincinnati, OH) March 18-22, 1991.
  139. Infrared Spectroscopy of chemically-prepared Silicon Surfaces, Y.J. Chabal, Columbia Radiation Laboratory Seminar (New York, NY) March 11, 1991.
  140. Surface Infrared Spectroscopy and its Applications to the Vibrational Dynamics of the Ideally Hydrogen-terminated Si(111) Surface, Y.J. Chabal, Chemical Physics Seminar Princeton University (Princeton, NJ) Jan. 31, 1991
  141. Dynamics of the ideally H-terminated Si(111) Surface studied by Vibrational Spectroscopy, Y.J. Chabal, Surface Science Seminar, University of Pennsylvania (Philadelphia, PA) Nov. 2, 1990.
  142. Vibrational Spectroscopy of Hydrogen-terminated Silicon Surfaces, Y.J. Chabal, condensed Matter Seminar, Ohio University (Athens, OH) Nov. 1, 1990.
  143. Hydrogen Passivation of Silicon Surfaces investigated with Infrared Spectroscopy, Y.J. Chabal, 37th Ann.American Vacuum Society Symposium &Topical Conferences (Toronto, Canada) Oct. 8-12, 1990.
  144. Dynamics of the ideally H-terminated Si(111) Surface studied by Vibrational Spectroscopy, Y.J. Chabal, 17th Annual meeting of the Fed. Anal. Chem. And Spect. Soc. (Cleveland, OH) Oct. 7-12, 1990.
  145. Infrared Spectroscopy of Hydrogen on Semiconductor Surfaces, Y.J. Chabal, 6th Trieste Semiconductor Symposium on Hydrogen in Semiconductors: Bulk and Surface Properties (Trieste, Italy) Aug. 27-31, 1990.
  146. Infrared Spectroscopy of Water-modified Silicon Surfaces, Y.J. Chabal, Gordon conf. on Fundamental Interactions of Water with Solid Surfaces (meridien, NH) July 16-20, 1990.
  147. Dynamics of Ideally H-terminated Si(111) Surface, Y.J. Chabal, 26th Int.Yamada Conference on Surface as a New Material (Osaka, Japan) July 2-6, 1990.
  148. Chemistry at Semiconductor Surfaces studied by Infrared Spectroscopy, Y.J. Chabal, First Catalysis Research Center Int. Symp. on Frontiers of Surface Chemistry (Hokkaido, Japan) June 28-29, 1990.
  149. Infrared Spectroscopy of Chemically Prepared Silicon Surfaces: Hydrogen Terminated Si(111), Y.J. Chabal, Condensed Matter Physics Seminar, Rutgers University (Piscataway, NJ) May 10, 1990.
  150. Spectroscopie Infrarouge de Surface Resolue en Temps et dans l'Infrarouge Lointoin, Y.J. Chabal, LURE (Orsay, France) Jan. 29, 1990.
  151. Etude par Spectroscopy Infrarouge des Surfaces de Silicium Modifiées Chimiquement, Y.J. Chabal Ecole Polytechnique (Palaiseau, France) Jan. 25, 1990.
  152. Etude par Spectroscopy Infrarouge des Surfaces de Silicium Modifiées Chimiquement, Y.J. Chabal, Séminaire specialisé at the CEA (Saclay, France) Jan. 24, 1990.
  153. Etude par Spectroscopy Infrarouge des Surfaces de Silicium Modifiées Chimiquement, Y.J. Chabal, Séminaire de l'Institut de Physique et Chimie des Matériaux, University of Nantes (Nantes, France) Jan. 22, 1990.
  154. Infrared Spectroscopy of Chemically Modified Silicon Surfaces, Y.J. Chabal, Seminar for Interdisciplinary Laboratory of Electronic Spectroscopy, University of Namur (Namur, Belgium), Jan. 19, 1990.
  155. Infrared Spectroscopy of Chemically Modified Silicon Surfaces, Y.J. Chabal, Institute Seminar, University of Hannover (Hannover, Germany) Jan. 18, 1990.
  156. Infrared Spectroscopy of Chemically Modified Silicon Surfaces, Y.J. Chabal, Solid State Seminar, University of Dusseldorf (Dusseldorf, Germany) Jan. 17. 1990.
  157. Infrared Spectroscopy of Chemically Modified Silicon Surfaces, Y.J. Chabal, Physics Colloquium at Fritz-Haber Institute (Berlin, Germany) Jan. 16, 1990.

 Additional Information
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Patents
  • Granted: US 6,388,290 B1:"Single Crystal Silicon on Polycrystalline Silicon Integrated Circuits" Yves J. Chabal and George K. Celler.
  • Granted: US 6,825,538  "Semiconductor device having a high K gate dielectric and method of manufacture thereof" Yves J. Chabal, Martin L. Green and Glen Wilk
  • Granted: US 7,223,677  "Process for fabricating a semiconductor device having an insulating layer formed over a Semiconductor Substrate" Yves J. Chabal, Martin Frank and Glen Wilk.
  • Filed: 'A Method for Semiconductor Device Fabrication in which an insulating Layer is formed over a Semiconductor Substrate" Yves J. Chabal, Martin Frank, Marin L. Green and Glen Wilk.

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