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    Faculty Profile — Is this you? Login to edit.Last Modified Time: 10:39:14 AM Tue, 22 Jan 2013 
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Robert M Wallace
Professor-Materials Science & Engineering, Department of, L.A.Beecherl,Jr. Distinguished Professor
Office MailstopMail Box: RL10, Room No.: RL4.414 
Email Address  rmwallace@utdallas.edu    Primary Phone Number 972-883-6638    URL Profile Website    Media Contact
 Professional Preparation
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 DegreeMajorInstitutionYear
 Ph.D.PhysicsUniversity of Pittsburgh1988
 M.S.PhysicsUniversity of Pittsburgh1984
 B.S.Physics, Applied MathematicsUniversity of Pittsburgh1982
Collapse Section Expand Section Research and Expertise
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Research Interests
Materials and integration issues for advanced devices including:
  • Gate dielectrics
  • Gate electrodes
  • Nanoelectronics
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 2 3 4 Next>> 45>>  
  YearPublication  Type
2013
M. Xu, J. J. Gu, C. Wang, D. M. Zhernokletov, R. M. Wallace, and P. D. Ye, "New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation," Journal of Applied Physics, 113 113711 (2013)
Peer reviewed
2013
H. Choi, , R. C Longo, M. Huang, J. N Randall, R. M Wallace and K. Cho, "A density-functional theory study of tip electronic structures in scanning tunneling microscopy," Nanotechnology, 24, 105201 (2013) http://stacks.iop.org/Nano/24/105201
Peer reviewed
2013
B. E. Coss, P. Sivasubramani, B. Brennan, P.Majhi, R. M. Wallace, and J. Kim, "Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal-semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques," Journal of Vacuum Science and Technology B 31, 021202 (2013) http://dx.doi.org/10.1116/1.4788805
Peer reviewed
2013
Santosh K. C., W. Wang, H. Dong, K. Xiong, R. C. Longo, R.M. Wallace, and K. Cho, "First principles study on InP (001)-(2ï‚´4) surface oxidation," Journal of Applied Physics, 113 103705 (2013) http://dx.doi.org/10.1063/1.4794826
Peer reviewed
2013
K. Xiong, W. Wang, D. M. Zhernokletov, Santosh K. C., R. C. Longo, R. M. Wallace, and K. Cho, "Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study," Applied Physics Letters, 102, 022901 (2013) http://dx.doi.org/10.1063/1.4775665
Peer reviewed
Collapse Section Expand Section Appointments
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DurationRankDepartment / SchoolCollege / OfficeUniversity / Company
2010Distinguished ProfessorMaterials Science and Engineering University of Texas at Dallas
2006-presentProfessorMaterials Science and Engineering University of Texas at Dallas
2004-2010DirectorCleanroom Research Laboratory University of Texas at Dallas
2003-presentProfessorDepts. of Electrical Engineering & Physics University of Texas at Dalla
1999-2003ProfessorDept. of Material Science University of North Texas
1999-2003DirectorLaboratory for Electric Materials and Devices University of North Texas
1997-1999ManagerAdvanced Technology Branch Texas Instruments, Inc.
1996-1997Sr. Member Technical StaffCentral Research Laboratories, Texas Instruments, Inc.
1990-1996Member, Technical StaffCentral Research Laboratories Texas Instruments, Inc.
1988-1990Posdoctoral AssociateChemistry Department University of Pittsburgh
 News Articles
Researchers Drafting Plans for Tiny Assembly Lines
UT Dallas News Center
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time.
 
“This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project.
 
Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.

Prof. Robert Wallace, Insulator Technology Pioneer, Honored for Sustained Excellence
UT Dallas News Center
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas.
 
In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing.
 
The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.

Electronics Engineers Honor UT Dallas Colleague
UT Dallas News Center
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers.
 
An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors.
 
A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.

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toggle toggle Patents
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List of Patents
Patent Independent Citations as of September 2008: >1370

   1. 7,288,171 (2007) Method for using field emitter arrays in chemical and biological hazard mitigation and remediation:
      B.E.Gnade and R.M.Wallace
   2. 7,115,461 (2006) High permittivity silicate gate dielectric:
      J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
   3. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar
   4. 6,933,235 (2005) Method for removing contaminants from a substrate:
      M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade
   5. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes:
      G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre
   6. 6,841,439 (2005) High permittivity silicate gate dielectric:
      J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
   7. 6,784,507 (2004) Gate Structure and Method
      R.M.Wallace and B.E.Gnade
   8. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics
      G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace
   9. 6,624,944 (2003) Fluorinated coating for an optical element
      R.M.Wallace, M.W.Cowens and S.A.Henck
  10. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics
      G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  11. 6,552,388 (2003) Hafnium Nitride Gate Dielectric
      G.D.Wilk and R.M.Wallace
  12. 6,468,856 (2002) High charge storage density integrated circuit capacitor R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong
  13. 6,436,801 (2002) Hafnium Nitride Gate Dielectric
      G.D.Wilk and R.M.Wallace
  14. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
      R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  15. 6,335,238 (2002) Integrated dielectric and method
      S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno
  16. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  17. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  18. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
      R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  19. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics
      G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  20. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates
      G.D. Wilk, Y.Wei and R.M.Wallace
  21. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide
      G.D. Wilk and R.M.Wallace
  22. 6,159,829 (2000): Memory device using movement of protons
      W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace
  23. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode J.P.Van der Wagt, G.D.Wilk and R.M.Wallace
  24. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature
      R.M.Wallace and P.J.Chen
  25. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals
      R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck
  26. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching
      R.M.Wallace and K.C.Harvey
  27. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk
  28. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device.
      R.M.Wallace and M.A.Douglas
  29. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates
      G.D.Wilk, Y.Wei and R.M.Wallace
  30. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  31. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  32. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer S.Tang, R.M.Wallace, and Y.Wei
  33. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade
  34. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter R.M.Wallace, B.E.Gnade and W.P.Kirk
  35. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter R.M.Wallace and D.A.Webb
  36. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure
      R.M.Wallace and A. C. Seabaugh
  37. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices
      R.M.Wallace, D.A.Webb and B.E.Gnade
  38. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter
      R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  39. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices R.M.Wallace, S.A.Henck and D.A.Webb
  40. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices
      M.A.Douglas and R.M.Wallace
  41. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  42. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption R.M.Wallace
  43. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method
      R.M.Wallace and B.E.Gnade

 Additional Information
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Professional Activity
  • Membership in Professional Organizations 
  • Materials Research Society 
  • American Vacuum Society 
  • Institute of Electronic and Electrical Engineers 
  • Electrochemical Society 
  • ASTM Committee E-42 on Surface Analysis 

Special Awards and Distinctions
  • (2009) Named Fellow of the IEEE “for contributions to high-k gate dielectric materials for integrated circuits” 
  • (2007) Named Fellow of the AVS “for significant contributions to high-k dielectric materials research enabling the scaling of integrated circuit technology” 
  • (2007) Best Paper Award, "Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study" by C. Driemeier, R. M. Wallace, and I.J. R. Baumvol, High Dielectric Constant Materials and Gate Stack Symposium, 212th Electrochemical Society Meeting, Washington, D.C. 
  • Co-author of paper entitled “High-k Gate Dielectrics: Current Status and Materials Properties Considerations” (in the Journal of Applied Physics 89 (2001) 5243. (>3100 citations as of December 2010). 
  • (2006) Selected as a high impact Applied Physics Review paper for the 75th Anniversary of the American Institute for Physics: http://jap.aip.org/09_10_09_75th_sample_articles
  • (2005) Recognized by the Semiconductor Research Corporation as the top ranked “influential research paper” for the semiconductor industry sponsored by the SRC based upon peer citations
  • (2003) Semiconductor Research Corporation Inventor Recognition Award 
  • (2002) Elected to Senior Member of the Institute for Electrical and Electronics Engineers 
  • (1998) ASTM E-42 Committee on Surface Analysis Service Award 
  • (1996) Sr. Member, Technical Staff – Texas Instruments (limited to top 5% of technical staff) 
  • (1988) Pittsburgh Crystal Growers Society Outstanding Researcher Award 
  • (1982) University of Pittsburgh David Halliday Prize for Outstanding Undergraduate Research in Physics

Teaching Experience
Courses Developed/Taught 
  • Introduction to Nanoscience and technology (UTD NANO 3301) 
  • Characterization and Nanotech Instrumentation (UTD NANO 3302) 
  • Introduction to Materials Science (UTD MSEN 5100) 
  • Electronic, Optical and Magnetic Materials (UTD EE/MSEN 6324) 
  • Fundamentals of Surface and Thin Film Analysis (UTD MSEN 5360) 
  • Materials Characterization (UNT) 
  • Quantum Mechanics for Materials Scientists (UNT) 
  • Diffraction Science (UNT) 
  • Silicon Surface Chemistry and Physics (at Texas Instruments)

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