The Professional Preparation section lists academic qualifications such as degrees and diplomas. Each record stores the degree, major, institution and year. The records can also be hidden from public view by checking the hide checkbox. Please click here for available slides.
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Materials and integration issues for advanced devices including:
The Publications section lists any and all publications worked on. Research Explorer's search engine indexes data in this field for keyword searches. The category field is a user defined field where any number of categories can be created by the user to categorize publications. For example, publications can be categorized by the Journal that they appear in. Please click here for available slides.
R. Addou, L. Colombo, and R. M. Wallace, “Surface Defects on Natural MoS2,” ACS Applied Materials and Interfaces, in press (2015)
Y.-C. Lin, R. Ghosh, R. Addou, N. Lu, S. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. Kim, L.-J. Li, R. Wallace, S. Datta, and J. Robinson “Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures,” Nature Communications, in press (2015).
A. Dahal, R. Addou, A. Azcatl, H. Coy-Diaz, N. Lu, X. Peng, F. De Dios, J. Kim, M.J. Kim, R.M. Wallace, and M. Batzill, “Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria,” ACS Applied Materials & Interfaces7, 2082 (2015)
J. Robertson and R.M.Wallace, “High-K materials and metal gates for CMOS applications,” Materials Science and Engineering R, 88, 1-41 (2015
J. P. Oviedo , Santosh KC , N. Lu , J. Wang , K. Cho , R. M. Wallace , and M. J. Kim, "In situ TEM Characterization of Shear Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide," ACS Nano, 9, 1543 (2015)
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A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time.
“This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project.
Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Prof. Robert Wallace, Insulator Technology Pioneer, Honored for Sustained Excellence
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas.
In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing.
The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers.
An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors.
A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
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Patent Independent Citations as of September 2008: >1370
1. 7,288,171 (2007) Method for using field emitter arrays in chemical and biological hazard mitigation and remediation: B.E.Gnade and R.M.Wallace 2. 7,115,461 (2006) High permittivity silicate gate dielectric: J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace 3. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar 4. 6,933,235 (2005) Method for removing contaminants from a substrate: M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade 5. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes: G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre 6. 6,841,439 (2005) High permittivity silicate gate dielectric: J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace 7. 6,784,507 (2004) Gate Structure and Method R.M.Wallace and B.E.Gnade 8. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace 9. 6,624,944 (2003) Fluorinated coating for an optical element R.M.Wallace, M.W.Cowens and S.A.Henck 10. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace 11. 6,552,388 (2003) Hafnium Nitride Gate Dielectric G.D.Wilk and R.M.Wallace 12. 6,468,856 (2002) High charge storage density integrated circuit capacitor R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong 13. 6,436,801 (2002) Hafnium Nitride Gate Dielectric G.D.Wilk and R.M.Wallace 14. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady 15. 6,335,238 (2002) Integrated dielectric and method S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno 16. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk 17. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk 18. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady 19. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace 20. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates G.D. Wilk, Y.Wei and R.M.Wallace 21. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide G.D. Wilk and R.M.Wallace 22. 6,159,829 (2000): Memory device using movement of protons W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace 23. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode J.P.Van der Wagt, G.D.Wilk and R.M.Wallace 24. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature R.M.Wallace and P.J.Chen 25. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck 26. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching R.M.Wallace and K.C.Harvey 27. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk 28. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device. R.M.Wallace and M.A.Douglas 29. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates G.D.Wilk, Y.Wei and R.M.Wallace 30. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk 31. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk 32. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer S.Tang, R.M.Wallace, and Y.Wei 33. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade 34. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter R.M.Wallace, B.E.Gnade and W.P.Kirk 35. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter R.M.Wallace and D.A.Webb 36. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure R.M.Wallace and A. C. Seabaugh 37. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices R.M.Wallace, D.A.Webb and B.E.Gnade 38. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor 39. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices R.M.Wallace, S.A.Henck and D.A.Webb 40. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices M.A.Douglas and R.M.Wallace 41. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor 42. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption R.M.Wallace 43. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method R.M.Wallace and B.E.Gnade
The Additional Information section describes any other topics you wish to display on your profile that is not in another section. Research Explorer's search engine indexes data in this field for keyword searches. Please click here for available slides.
Institute of Electronic and Electrical Engineers (Fellow)
ASTM Committee E-42 on Surface Analysis
Special Awards and Distinctions
(2009) Named Fellow of the IEEE “for contributions to high-k gate dielectric materials for integrated circuits”
(2007) Named Fellow of the AVS “for significant contributions to high-k dielectric materials research enabling the scaling of integrated circuit technology”
(2007) Best Paper Award, "Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study" by C. Driemeier, R. M. Wallace, and I.J. R. Baumvol, High Dielectric Constant Materials and Gate Stack Symposium, 212th Electrochemical Society Meeting, Washington, D.C.
Co-author of paper entitled “High-k Gate Dielectrics: Current Status and Materials Properties Considerations” (in the Journal of Applied Physics 89 (2001) 5243. (>3100 citations as of December 2010).
(2006) Selected as a high impact Applied Physics Review paper for the 75th Anniversary of the American Institute for Physics: http://jap.aip.org/09_10_09_75th_sample_articles
(2005) Recognized by the Semiconductor Research Corporation as the top ranked “influential research paper” for the semiconductor industry sponsored by the SRC based upon peer citations
(2003) Semiconductor Research Corporation Inventor Recognition Award
(2002) Elected to Senior Member of the Institute for Electrical and Electronics Engineers
(1998) ASTM E-42 Committee on Surface Analysis Service Award
(1996) Sr. Member, Technical Staff – Texas Instruments (limited to top 5% of technical staff)
(1988) Pittsburgh Crystal Growers Society Outstanding Researcher Award
(1982) University of Pittsburgh David Halliday Prize for Outstanding Undergraduate Research in Physics
Introduction to Nanoscience and technology (UTD NANO 3301)
Characterization and Nanotech Instrumentation (UTD NANO 3302)
Introduction to Materials Science (UTD MSEN 5100)
Electronic, Optical and Magnetic Materials (UTD EE/MSEN 6324)
Fundamentals of Surface and Thin Film Analysis (UTD MSEN 5360)
Materials Characterization (UNT)
Quantum Mechanics for Materials Scientists (UNT)
Diffraction Science (UNT)
Silicon Surface Chemistry and Physics (at Texas Instruments)
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