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Jiyoung Kim
Professor-Materials Science & Engineering, Department of Materials Science and Engineering
Office MailstopMail Box: RL10, Room No.: NSERL 4.410 
Email Address  jiyoung.kim@utdallas.edu    Primary Phone Number 972-883-6412    Media Contact
 Professional Preparation
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 DegreeMajorInstitutionYear
 Ph.D.Materials Science and EngineeringUniversity of Texas at Austin1994
 M.S.Metallurgical EngineeringSeoul National University1988
 B.S.Metallurgical EngineeringSeoul National University1986
Collapse Section Expand Section Research and Expertise
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Research Interests
Gate Stack Engineering for the Next Generation Complementary
Metal-oxide-semiconductor (CMOS) Applications
Nano-structure Materials and Devices for Nanoelectronics
Novel Atomic Layer Deposition (ALD) Applications
Novel Memory Device Materials, Fabrication and Applications
Nano-sensor Fabrication and ApplicationsR
Collapse Section Expand Section Publications
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 2 3 4 Next>> 7>>  
  YearPublication  Type
forthcoming
T. J. Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseaus, X. Liu, H. Li, J.-S. Lehn, D. Hong, D. Shenai, “Reduction of residual C and N-related impurities by Al2O3 insertion in atomic-layer-deposited La2O3 thin films,” Electrochem. Solid.Lett. 14 (4) DOI:10.1149/1.3545965 (In print)
Peer reviewed
forthcoming
K.J. Chung, et al., Micro. Electron. Eng. (Submitted)
Peer reviewed
forthcoming
B. Lee, A. Hande, H. Kim, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi,. H. Li, D. Shenai, and J. Suydam, “LaHfO nano-laminates for high-k gate dielectric applications,” Micro. Electron. Eng. (Submitted)
Peer reviewed
forthcoming
D. Cha, B. Lee, M. J. Kim, J. Kim, “Fabrication and characteristic of stand-alone single TiO2 nanotube devices,” Adv. Function. Mater. (In Prep.)
Peer reviewed
forthcoming
K.J. Choi, B. Lee, S. J. McDonnell, R.M. Wallace, J. Kim, “Step by step in-situ X-ray photoelectron spectroscopy investigation on ALD Al2O3 films using TMA and water on Si substrate,” (In Preparation)
Peer reviewed
Collapse Section Expand Section Presentations and Projects
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  1  2 
Start DateEnd DatePresentation/Project
2007 2007 GaAs MOS frequency dispersion reduction by surface oxide removal and passivation
C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, "GaAs MOS frequency dispersion reduction by surface oxide removal and passivation," IEEE-SISC (2007)
2007 2007 XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs
F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, "XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs," IEEE-SISC (2007)
2007 2007 Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations
B. Coss, F. Aguirre-Tostado, R. Wallace and J. Kim, "Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations," 2007 Fall MRS, Boston, Nov. (2007)
11/05/2007 11/09/2007 Study of interface electromigration mechanism in Cu/barrier interconnects
J. Kim, N. Michael, C. Kim, Y. Park, R. Augur, J. Kim, "Study of interface electromigration mechanism in Cu/barrier interconnects," The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007
10/2007 10/2007 "Step by step in-situ X-ray photoelectron spectroscopy investigate ion ALD Al2O3 films using TMA and water,"
K. J. Choi, S. J. McDonnell, R. M. Wallace, J. Kim, "Step by step in-situ X-ray photoelectron spectroscopy investigate ion ALD Al2O3 films using TMA and water," AVS meeting, Seattle/WA, Oct. (2007) Accepted
Collapse Section Expand Section Appointments
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DurationRankDepartment / SchoolCollege / OfficeUniversity / Company
2013-PresentProfessorMaterials Sci. & Eng U. of Texas at Dallas
2008-2013Associate ProfessorMaterials Sci. & Eng U. of Texas at Dallas
2005-2013Associate ProfessorDept of Electrical E. Univ. of Texas at Dallas
2004-2005Director Research Institute of Nano Technology and ScienceKookmin U
2004-2004Visiting ResearcherDept. of Electrical Eng.  Univ. of Texas
2003-2005Associate Professor Prog. In Nano-Sci & Tech.Kookmin U
2003-2003Visiting ResearcherDept. of Materials Sci. U of North Texas
2002-2005Associate ProfessorSch. of Adv. Materials Eng. Kookmin U
1998-2002Assistant ProfessorSch. Materials Eng. Kookmin U
1996-1998Fulltime LecturerDept. of Materials Eng. Kookmin U
1994-1996Process Integration Eng.  "World Wide Productization, Texas Inst."
1993-1994Academic Contractor  "APRDL, Motorola"
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 Additional Information
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Honors and awards
  • Selected Outstanding Research by Korean Ministry Of Science and Technology, (2004) Press Released
  • Best Paper Award at 2004 Korean Metals and Materials Society (2004)
  • Best Poster Award at 2003 Korean Materials Research Society Meeting (2003)
  • Named in "Who's Who in Science and Engineering (2000)"
  • Named in "Who's Who in the World (1999)"
  • Korean Government Oversea Scholarship (1990 - 1993)

Grants Received
  • J. Kim (PI), M. J. Kim (Co-PI) "Single TiO2 nanotube devices for photo and chemical sensors" NSF-NER, $128,442 07/2007 - 06/2008 : "This proposal was recommended for award by NSF selection committee but it was declined due to institutional error."
  • J.Kim (PI) Development of Core Technology for 50nm MOSFET Fabrication COSAR(Consortium Of Semiconductor Advanced Research) (subcontract from Hanyang U.), $120,523  (EJS Match: $80,000) 9/2005 -8/2007 2 %
  • J.Kim (PI), M. Kim "Stand-Alone Nanotube Device Technology," CNMT (Center for Nano-Materials and Technology) (subcontract from Kookmin U.),  $190,000 (EJS Match: $ 50,000) 10/2005 - 2/2007. ($160,730)  3 %
  • J. Kim (PI), R. Wallace, M. Kim, B. Gnade (Co-PIs) "Morphology, Bonding and Diffusion Studies of Metal/High-k Stacks" SEMATECH 09/2006 - 08/2007, $100,000  (EJS Matching $32,000) 2 %
  • J.Kim (UTD-PI), C.Kim (UTA-PI)  "Exploration of New Barrier Materials for Future Generation Microelectronic Devices" UTA - UTD Joint Institutional Seed Research Program 3/2006 - 2/2007, $20,000 1 %
  • J.Kim (PI) Unrestricted Gift Samsung Electronics Co. $40,000 1 %

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