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William Frensley
Professor-Electrical Engineering
Office MailstopMail Box: EC33, Room No.: ECSN 2.902 
Email Address  frensley@utdallas.edu    Primary Phone Number 972-883-2412    Fax Number (972) 883-2710    URL Faculty Homepage    Media Contact
 Professional Preparation
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 DegreeMajorInstitutionYear
 Ph.D.PhysicsUniversity of Colorado1976
 B.S.PhysicsCalifornia Institute of Technology, Pasadena1973
Collapse Section Expand Section Research and Expertise
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Research Areas
  1. Electron transport in semiconductor devices, high-performance devices, quantum devices.
  2. Quantum transport theory, kinetic theories.
  3. Physics of semiconductor heterostructures, band lineup, size quantization, resonant tunneling, electron waveguides.
  4. Device simulation techniques, development of interactive modeling tools.
  5. Application of computer graphics and object-oriented software design.
Research and Development Accomplishments in Industry
(1984-90) Developed theory and computer-modeling tools for quantum-effect heterostructure devices. Established a quantum-transport theory for such devices which contributed to fundamental understanding of the physics of open systems.
(1985-86) Developed GaAs hetero-bipolar transistor IC technology for A/D converter.
(1982-83) Managed DARPA program to develop novel, vertically-oriented GaAs FET and monolithic IMPATT technologies for millimeter-wave applications. MBE,RIE, and E-beam lithography were combined to produce working vertical FET devices with 0.3 ?m minimum features.
(1980-82) Developed fabrication technology for the permeable base transistor (PBT). Discovered submicron voids in epitaxially overgrown layers. Demonstrated 0.2 m lines on 0.5 ?m pitch by electron-beam lithography.
(1981) Developed first IC layouts for heterojunction-bipolar integrated injection logic (HI2L) circuits.
(1979-80) Studied power-limiting breakdown effects in GaAs MESFETs. Identified site of breakdown which was verified by observation of visible light emission under power-saturated operation. Studies involved twodimensional numerical simulation and analytic conformal-mapping modeling.
(1978) Initiated development of ion-implanted GaAs FETs at TI and demonstrated power microwave operation of these device.
Research and Development Accomplishments in Academia
(1991) Developed first direct numerical technique for evaluating resonant quantum states in an arbitrary potential.
(1990- ) Supported heterostructure and quantum device development at SNL, TI and UCSB by delivering device design tool computer codes.
(1974-77) Developed first microscopic theory for the prediction of semiconductor heterojunction band alignment.
Contractual Research in Industry
  • "Few-Electron Lateral Resonant Tunneling Semiconductor Devices," Office of Naval Research, N00014-89-C-0128, Mar. 1989-Apr. 1990 (Program manager).
  • "Research on GaAs Quantum-Coupled Structures that Can Be Used as Electron Devices," Office of Naval Research,  N00014-87-C-0700, 1984-1988.
  • "Quantum Device Development," Defense Advanced Research Projects Agency, N00014-87-C-0363, Sept. 1987-Feb. 1990.
  • "Nanoelectronics," U. S. Army Research Office, DAAG29-84-C-009, June 1984-June 1987.
  • "Heterojunction Bipolar A/D Converter Technology," Defense Advanced Research Projects Agency, N00014-83-C-0338, Mar, 1985- June 1986.
  • "EHF Monolithic Arrays, Vertical FET and Monolithic IMPATT Development," Defense Advanced Research Projects Agency, N00123-81-C-1228, Aug. 1981- Feb. 1984 (Program manager).
  • "Permeable Base Transistor Development." Office of Naval Research, N00014-80-C-0246, Feb. 1980 -June 1982 (Program manager).
  • "X-band GaAs FET Amplifiers," Air Force Avionics Laboratory, F33615-78-C-1510, 1978-1980.
Collapse Section Expand Section Publications
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 1  2 3  
  YearPublication  Type
2012
X. Yang, W. Frensley, D. Zhou, and W. Hu, "Performance Analysis Biosensor By Numerical modeling for Charge Sensing." IEEE Transactions on Nanotechnology, vol. 11, no. 3 pp. 501-12 [2012].
Other
2010
M. Rodwell, W.R. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, J. Law, T. Boykin, G. Klimeck, P. Asbeck, A. Kummel, and J.N. Schulman, "III-V FET Channel Designs for High Current Densities and Thin Inversion Layers," 68th IEEE Device Research Conference Digest, Notre Dame, Indiana, pp. 149-52 [2010].
Other
2008
W. R. Frensley, “Development of electronic device simulations for educational purposes,” J. Computatational Electronics, vol. 7, pp. 494–9 [2008].
Other
2008
M. Asahara, C. F. Campbell, andW. R. Frensley, "An In-Depth, Theoretical Investigation into Modeling MIM Capacitors using Symmetric Coupled Lines in a Homogeneous Medium Model," IEEE Microwave and Wireless Components Letters, vol. 18, pp. 37-39,[Jan. 2008].
Category: IEEE Microwave and Wireless Components Letters
Other
2007
M. Asahara, C. F. Campbell, and W. R. Frensley, "A Novel Approach to Modeling Metal-Insulator-Metal Capacitors over Vias with Significant Electrical Length," IEEE Transactions on Microwave Theory and Techniques, vol. 55, pp. 709-14 (2007). April 2007.
Category: IEEE Transactions on Microwave Theory and Techniqu...
Other
Collapse Section Expand Section Appointments
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DurationRankDepartment / SchoolCollege / OfficeUniversity / Company
Oct. 1977-Apr. 1990Member, Technical StaffCentral Research Laboratories Texas Instruments, Inc.
Oct. 1976-Sept. 1977Postdoctoral ResearcherElectrical Engineering Department University of California at Santa Barbara
May 1990-PresentProfessorElectrical Engineering Department University of Texas at Dallas
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 Additional Information
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"Consulting, Patents, Etc."
  1. U. S. Patent 6,359,520, G. A. Frazier and W. R. Frensley, "Optically Powered Resonant Tunneling Device,'' issued Mar. 19, 2002.
  2. U. S. Patent 5,059,545, W. R. Frensley and M. A. Reed, "Three Terminal Tunneling Device and Method,'' issued Oct. 22, 1991.
  3. U. S. Patent 4,959,696, W. R. Frensley and M. A. Reed, "Three Terminal Tunneling Device and Method,'' issued Sept. 25, 1990.
  4. U. S. Patent 4,866,488, W. R. Frensley, "Ballistic Transport Filter and Device,'' issued Sept. 12, 1989.
  5. U. S. Patent 4,803,537, A. J. Lewis and W. R. Frensley, "Infrared Detector System Based Upon Group III-V Epitaxial Material,'' issued Feb. 7, 1989
  6. U. S. Patent 4,705,361, G. A. Frazier, W. R. Frensley and M. A. Reed, "Spatial Light Modulator,'' issued Nov. 10, 1987.
  7. U. S. Patent 4,539,528, B. Bayraktaroglu, B. Kim and W. R. Frensley, "Two-Port Amplifier,'' issued Sept. 3, 1985.

Patents
7. U. S. Patent 6,359,520, G. A. Frazier and W. R. Frensley, "Optically Powered Resonant Tunneling Device," issued Mar. 19, 2002.
6. U. S. Patent 5,059,545, W. R. Frensley and M. A. Reed, "Three Terminal Tunneling Device and Method," issued Oct. 22, 1991.
5. U. S. Patent 4,959,696, W. R. Frensley and M. A. Reed, "Three Terminal Tunneling Device and Method," issued Sept. 25, 1990.
4. U. S. Patent 4,866,488 W. R. Frensley, "Ballistic Transport Filter and Device," issued Sept. 12, 1989. (TI 10535A)
3. U. S. Patent 4,803,537, A. J. Lewis and W. R. Frensley, "Infrared Detector System Based Upon Group III-V Epitaxial Material," issued Feb. 7, 1989. (TI 9847B)
2. U. S. Patent 4,705,361, G. A. Frazier, W. R. Frensley and M. A. Reed, "Spatial Light Modulator," issued Nov. 10, 1987. (TI 10953)
1. U. S. Patent 4,539,528, B. Bayraktaroglu, B. Kim and W. R. Frensley, "Two-Port Amplifier," issued Sept. 3, 1985.

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